Full wafer size micro/nanostencil with multiple length-scale apertures

ull wafer size micro/nanostencil with multiple length-scale apertures

Gyuman Kim, Marc van den Boogaart, Jürgen Brugger, Microelectronic Engineering 67<8 (2003) 609<14

A new tool of surface patterning technique for general purpose beyond lithography was developed based on high-resolution shadow mask method, or nanostencil. We describe the fabrication of a new type of miniaturized shadow mask. The shadow maskis fabricated by combination of standard photolithography and etching, and focused ion beam (FIB) milling. The fabricated shadow mask with apertures of multiple length scale ranging from 100 nm to 100s μm made on a low stress silicon nitride membrane allows micro and nano scale patterns to be directly deposited on arbitrary surfaces.This high-resolution shadow mask method has much wider choice of deposit materials, and can be applied to wider class of surfaces including chemical functional layer, MEMS/NEMS surfaces, and viosensors.

Scanning electron microscopy (SEM) images of multiple-length scale shadow mask. Right, micro apertures and nano apertures. The microslit aperture is 1.5-µm-wide and 50-µm-long. Left, enlarged view of nano apertures. The dimension of nanoslit aperture is 170-nm-wide, 2-µm-long.